All MOSFET. ME4626-G Datasheet

 

ME4626-G Datasheet and Replacement


   Type Designator: ME4626-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: SOP-8
 

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ME4626-G Datasheet (PDF)

 ..1. Size:1347K  matsuki electric
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ME4626-G

ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) GENERAL DESCRIPTION FEATURES The ME4626-G is the N-Channel logic enhancement mode power RDS(ON)3.5m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)4.5m@VGS=4.5V trench technology. This high density process is especially tailor

 8.1. Size:1598K  cn vbsemi
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ME4626-G

ME4626www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0030 at VGS = 10 V 25 TrenchFET Gen II300.0040 at VGS = 4.5 V Ultra Low On-Resistance Using High22Density TrenchFET Power MOSFETTechnologyAPPLICATIONS Synchronous Buck Low-Side- Notebook- Server

Datasheet: ME4565A-G , ME4565AD4 , ME4565AD4-G , ME45N03T , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , IRF1404 , ME4825 , ME4825-G , ME4925 , ME4925-G , ME4946 , ME4946-G , ME4953-G , ME4954 .

History: SM4803APRL | SI2301-TP | AOD480 | AP9974GP | 2SK2080-01 | AM2N7002K | NCE70T900

Keywords - ME4626-G MOSFET datasheet

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