All MOSFET. ME4626-G Datasheet

 

ME4626-G Datasheet and Replacement


   Type Designator: ME4626-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: SOP-8
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ME4626-G Datasheet (PDF)

 ..1. Size:1347K  matsuki electric
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ME4626-G

ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) GENERAL DESCRIPTION FEATURES The ME4626-G is the N-Channel logic enhancement mode power RDS(ON)3.5m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)4.5m@VGS=4.5V trench technology. This high density process is especially tailor

 8.1. Size:1598K  cn vbsemi
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ME4626-G

ME4626www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0030 at VGS = 10 V 25 TrenchFET Gen II300.0040 at VGS = 4.5 V Ultra Low On-Resistance Using High22Density TrenchFET Power MOSFETTechnologyAPPLICATIONS Synchronous Buck Low-Side- Notebook- Server

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: GSM2301S | ELM13401CA | 12N65KG-TF1-T | FRM240R | R5016ANJ | DH150N12B | BSB280N15NZ3G

Keywords - ME4626-G MOSFET datasheet

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