ME4626-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4626-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 128 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 660 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Package: SOP-8
ME4626-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4626-G Datasheet (PDF)
me4626 me4626-g.pdf
ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) GENERAL DESCRIPTION FEATURES The ME4626-G is the N-Channel logic enhancement mode power RDS(ON)3.5m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)4.5m@VGS=4.5V trench technology. This high density process is especially tailor
me4626.pdf
ME4626www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0030 at VGS = 10 V 25 TrenchFET Gen II300.0040 at VGS = 4.5 V Ultra Low On-Resistance Using High22Density TrenchFET Power MOSFETTechnologyAPPLICATIONS Synchronous Buck Low-Side- Notebook- Server
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