All MOSFET. ME4825-G Datasheet

 

ME4825-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4825-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP-8

 ME4825-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4825-G Datasheet (PDF)

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 me4825 me4825-g.pdf

ME4825-G ME4825-G

ME4825/ME4825-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)21m@VGS=-10V The ME4825 is the P-Channel logic enhancement mode power field RDS(ON)29m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta

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