All MOSFET. ME4825-G Datasheet

 

ME4825-G Datasheet and Replacement


   Type Designator: ME4825-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 8.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP-8
 

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ME4825-G Datasheet (PDF)

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ME4825-G

ME4825/ME4825-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)21m@VGS=-10V The ME4825 is the P-Channel logic enhancement mode power field RDS(ON)29m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta

Datasheet: ME4565AD4-G , ME45N03T , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G , ME4825 , IRF640N , ME4925 , ME4925-G , ME4946 , ME4946-G , ME4953-G , ME4954 , ME4954-G , ME4970-G .

History: IPD038N06N3G | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B | 2SK1928

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