ME4825-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4825-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 8.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOP-8
ME4825-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4825-G Datasheet (PDF)
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me4825 me4825-g.pdf
me4825 me4825-g.pdf
ME4825/ME4825-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)21m@VGS=-10V The ME4825 is the P-Channel logic enhancement mode power field RDS(ON)29m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta
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History: HSU4016
