ME50P06-G PDF and Equivalents Search

 

ME50P06-G Specs and Replacement

Type Designator: ME50P06-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 373 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO-252

ME50P06-G substitution

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ME50P06-G datasheet

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ME50P06-G

ME50P06/ME50P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50P06 is the P-Channel logic enhancement mode power field RDS(ON) 17m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 20m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

Detailed specifications: ME4970-G, ME50N06A, ME50N06A-G, ME50N06T, ME50N06T-G, ME50N75T, ME50N75T-G, ME50P06, AON7408, ME55N06A, ME55N06A-G, ME60N03-G, ME60N03AS, ME60N03AS-G, ME60P06T, ME60P06T-G, ME66N04T

Keywords - ME50P06-G MOSFET specs

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