All MOSFET. ME50P06-G Datasheet

 

ME50P06-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME50P06-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 373 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-252

 ME50P06-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME50P06-G Datasheet (PDF)

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 me50p06 me50p06-g.pdf

ME50P06-G ME50P06-G

ME50P06/ME50P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50P06 is the P-Channel logic enhancement mode power field RDS(ON)17m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)20m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

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