All MOSFET. ME50P06-G Datasheet

 

ME50P06-G Datasheet and Replacement


   Type Designator: ME50P06-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 373 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-252
 

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ME50P06-G Datasheet (PDF)

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ME50P06-G

ME50P06/ME50P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50P06 is the P-Channel logic enhancement mode power field RDS(ON)17m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)20m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

Datasheet: ME4970-G , ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G , ME50N75T , ME50N75T-G , ME50P06 , 2N7000 , ME55N06A , ME55N06A-G , ME60N03-G , ME60N03AS , ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T .

History: AM4832N | SHD225623 | HM3018SR | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

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