All MOSFET. ME60P06T-G Datasheet

 

ME60P06T-G Datasheet and Replacement


   Type Designator: ME60P06T-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 427 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-220
 

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ME60P06T-G Datasheet (PDF)

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ME60P06T-G

ME60P06T/ME60P06T-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60P06T is the P-Channel logic enhancement mode power RDS(ON)16.5m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20.5m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

Datasheet: ME50P06 , ME50P06-G , ME55N06A , ME55N06A-G , ME60N03-G , ME60N03AS , ME60N03AS-G , ME60P06T , AO3400 , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G .

History: SLD80R850SJ | ELM13407CA-S | 2N60G-E-K08-5060-R | CJPF05N65 | IRF820LPBF | CSD19532Q5B | STY34NB50

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