ME60P06T-G PDF and Equivalents Search

 

ME60P06T-G Specs and Replacement

Type Designator: ME60P06T-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.1 nS

Cossⓘ - Output Capacitance: 427 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: TO-220

ME60P06T-G substitution

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ME60P06T-G datasheet

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ME60P06T-G

ME60P06T/ME60P06T-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60P06T is the P-Channel logic enhancement mode power RDS(ON) 16.5m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20.5m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme... See More ⇒

Detailed specifications: ME50P06, ME50P06-G, ME55N06A, ME55N06A-G, ME60N03-G, ME60N03AS, ME60N03AS-G, ME60P06T, AO3401, ME66N04T, ME6968ED, ME6968ED-G, ME6980ED, ME6980ED-G, ME7114S-G, ME7804S-G, ME7839S-G

Keywords - ME60P06T-G MOSFET specs

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