All MOSFET. ME66N04T Datasheet

 

ME66N04T Datasheet and Replacement


   Type Designator: ME66N04T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 666 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-220FB
 

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ME66N04T Datasheet (PDF)

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ME66N04T

ME66N04TN- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) =10.5m The ME66N04T is the N-Channel logic enhancement mode power @VGS=10V RDS(ON) =13.5mfield effect transistors are produced using high cell density DMOS @VGS=4.5V Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailore

Datasheet: ME50P06-G , ME55N06A , ME55N06A-G , ME60N03-G , ME60N03AS , ME60N03AS-G , ME60P06T , ME60P06T-G , SPP20N60C3 , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A .

History: SLI80R380SJ | PV604CA | SSF12N65F | IRF6100 | OSG65R650FZF | AOC3868 | AP8N010LM

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