ME66N04T PDF and Equivalents Search

 

ME66N04T Specs and Replacement

Type Designator: ME66N04T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 666 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO-220FB

ME66N04T substitution

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ME66N04T datasheet

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ME66N04T

ME66N04T N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) =10.5m The ME66N04T is the N-Channel logic enhancement mode power @VGS=10V RDS(ON) =13.5m field effect transistors are produced using high cell density DMOS @VGS=4.5V Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailore... See More ⇒

Detailed specifications: ME50P06-G, ME55N06A, ME55N06A-G, ME60N03-G, ME60N03AS, ME60N03AS-G, ME60P06T, ME60P06T-G, K3569, ME6968ED, ME6968ED-G, ME6980ED, ME6980ED-G, ME7114S-G, ME7804S-G, ME7839S-G, ME80N08A

Keywords - ME66N04T MOSFET specs

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