All MOSFET. ME6968ED-G Datasheet

 

ME6968ED-G Datasheet and Replacement


   Type Designator: ME6968ED-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TSSOP-8
 

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ME6968ED-G Datasheet (PDF)

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ME6968ED-G

ME6968ED(-G) Dual N-Channel 20V(D-S) Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V The ME6968ED Dual N-Channel logic enhancement mode power RDS(ON)27m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)32m@VGS=2.5V trench technology. This high density process is especially tailored to S

Datasheet: ME55N06A-G , ME60N03-G , ME60N03AS , ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , 2SK3568 , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G .

History: AP3N4R0S | ME4946-G | P5102FMA | FDS6672A | ELM33408CA | HM3207T | NP80N06NLG

Keywords - ME6968ED-G MOSFET datasheet

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