All MOSFET. ME6968ED-G Datasheet

 

ME6968ED-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME6968ED-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TSSOP-8

 ME6968ED-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME6968ED-G Datasheet (PDF)

 ..1. Size:1082K  matsuki electric
 me6968ed me6968ed-g.pdf

ME6968ED-G ME6968ED-G

ME6968ED(-G) Dual N-Channel 20V(D-S) Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V The ME6968ED Dual N-Channel logic enhancement mode power RDS(ON)27m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)32m@VGS=2.5V trench technology. This high density process is especially tailored to S

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCEP12T15 | SSW1N50A | PK6H2BA | WM02P06H

 

 
Back to Top