ME6968ED-G PDF and Equivalents Search

 

ME6968ED-G Specs and Replacement

Type Designator: ME6968ED-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TSSOP-8

ME6968ED-G substitution

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ME6968ED-G datasheet

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ME6968ED-G

ME6968ED(-G) Dual N-Channel 20V(D-S) Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 25m @VGS=10V The ME6968ED Dual N-Channel logic enhancement mode power RDS(ON) 27m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 32m @VGS=2.5V trench technology. This high density process is especially tailored to S... See More ⇒

Detailed specifications: ME55N06A-G, ME60N03-G, ME60N03AS, ME60N03AS-G, ME60P06T, ME60P06T-G, ME66N04T, ME6968ED, 4435, ME6980ED, ME6980ED-G, ME7114S-G, ME7804S-G, ME7839S-G, ME80N08A, ME80N08A-G, ME80N75F-G

Keywords - ME6968ED-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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