STH15N50 PDF and Equivalents Search

 

STH15N50 Specs and Replacement


   Type Designator: STH15N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO218
 

 STH15N50 substitution

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STH15N50 datasheet

 8.1. Size:206K  st
sth15nb50fi stw15nb50.pdf pdf_icon

STH15N50

STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33 - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW15NB50 500 V ... See More ⇒

 8.2. Size:409K  st
sth15na50.pdf pdf_icon

STH15N50

STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH15NA50 500 V ... See More ⇒

 9.1. Size:965K  st
sth150n10f7-2.pdf pdf_icon

STH15N50

STH150N10F7-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 110 A 250 W TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity 3 1 High avalanche ruggedness 2 H... See More ⇒

Detailed specifications: STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STP80NF70 , STH15N50FI , STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 .

Keywords - STH15N50 MOSFET specs

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