STH15N50 Specs and Replacement
Type Designator: STH15N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO218
STH15N50 substitution
STH15N50 datasheet
sth15nb50fi stw15nb50.pdf
STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33 - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW15NB50 500 V ... See More ⇒
sth15na50.pdf
STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH15NA50 500 V ... See More ⇒
sth150n10f7-2.pdf
STH150N10F7-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 110 A 250 W TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity 3 1 High avalanche ruggedness 2 H... See More ⇒
Detailed specifications: STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STP80NF70 , STH15N50FI , STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 .
Keywords - STH15N50 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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