All MOSFET. ME6980ED-G Datasheet

 

ME6980ED-G Datasheet and Replacement


   Type Designator: ME6980ED-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1100 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TSSOP-8
 

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ME6980ED-G Datasheet (PDF)

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ME6980ED-G

ME6980ED/ME6980ED-G Dual N-Channel 20V(D-S) Enhancement Mode Mosfet , ESD Protection GENERAL DESCRIPTION FEATURES RDS(ON)14.5m@VGS=4.5V The ME6980ED is the Dual N-Channel logic enhancement mode RDS(ON)15m@VGS=4.0V power field effect transistors are produced using high cell density, RDS(ON)17m@VGS=3.1V DMOS trench technology. This high density proces

Datasheet: ME60N03AS , ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , IRF9540N , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G , ME80N75T , ME80N75T-G .

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