ME7839S-G PDF and Equivalents Search

 

ME7839S-G Specs and Replacement

Type Designator: ME7839S-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 36.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.3 nS

Cossⓘ - Output Capacitance: 371 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN3X3

ME7839S-G substitution

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ME7839S-G datasheet

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ME7839S-G

ME7839S-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7839S P-Channel logic enhancement mode power field RDS(ON) 12m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 19m @VGS=-4.5V technology. This high density process is especially tailored to APPLICATIONS Power Management in Note book minimize on-s... See More ⇒

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ME7839S-G

ME7839S-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7839S P-Channel logic enhancement mode power field RDS(ON) 12m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 19m @VGS=-4.5V technology. This high density process is especially tailored to APPLICATIONS Power Management in Note book minimize on-s... See More ⇒

Detailed specifications: ME60P06T-G, ME66N04T, ME6968ED, ME6968ED-G, ME6980ED, ME6980ED-G, ME7114S-G, ME7804S-G, AON7410, ME80N08A, ME80N08A-G, ME80N75F-G, ME80N75T, ME80N75T-G, ME8107, ME8107-G, ME8205E

Keywords - ME7839S-G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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