All MOSFET. ME7839S-G Datasheet

 

ME7839S-G Datasheet and Replacement


   Type Designator: ME7839S-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 36.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 371 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3X3
 

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ME7839S-G Datasheet (PDF)

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ME7839S-G

ME7839S-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7839S P-Channel logic enhancement mode power field RDS(ON) 12m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 19m@VGS=-4.5V technology. This high density process is especially tailored to APPLICATIONS Power Management in Note book minimize on-s

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ME7839S-G

ME7839S-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7839S P-Channel logic enhancement mode power field RDS(ON) 12m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 19m@VGS=-4.5V technology. This high density process is especially tailored to APPLICATIONS Power Management in Note book minimize on-s

Datasheet: ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , RFP50N06 , ME80N08A , ME80N08A-G , ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 , ME8107-G , ME8205E .

History: VBZA4850 | IRFU2905ZPBF | CTLDM7120-M563 | IXFN360N10T | SSM6K08FU | WMM30N80M3 | OSG65R380FSF-NB

Keywords - ME7839S-G MOSFET datasheet

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