All MOSFET. ME7839S-G Datasheet

 

ME7839S-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7839S-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 36.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.6 nC
   trⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 371 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3X3

 ME7839S-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7839S-G Datasheet (PDF)

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 me7839s-g.pdf

ME7839S-G ME7839S-G

ME7839S-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7839S P-Channel logic enhancement mode power field RDS(ON) 12m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 19m@VGS=-4.5V technology. This high density process is especially tailored to APPLICATIONS Power Management in Note book minimize on-s

 ..2. Size:1383K  matsuki electric
 me7839s-g.pdf

ME7839S-G ME7839S-G

ME7839S-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7839S P-Channel logic enhancement mode power field RDS(ON) 12m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 19m@VGS=-4.5V technology. This high density process is especially tailored to APPLICATIONS Power Management in Note book minimize on-s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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