ME8107-G MOSFET Datasheet: P-Ch, 35V, 14A. Full specification with pinout and replacement list

ME8107-G Specs and Replacement

Type Designator: ME8107-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: SOP-8

ME8107-G substitution

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ME8107-G datasheet

..1. Size:1191K matsuki electric
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ME8107/ME8107-G P-Channel 35V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME8107-G is the P-Channel logic enhancement mode power RDS(ON) 7.2m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 12m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for e... See More ⇒

8.1. Size:819K cn vbsemi
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ME8107 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S... See More ⇒

Detailed specifications: ME7804S-G, ME7839S-G, ME80N08A, ME80N08A-G, ME80N75F-G, ME80N75T, ME80N75T-G, ME8107, CS150N03A8, ME8205E, ME8205E-G, ME85P03, ME85P03-G, ME90N03, ME90N03-G, ME9435, ME9435-G