All MOSFET. ME8107-G Datasheet

 

ME8107-G Datasheet and Replacement


   Type Designator: ME8107-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: SOP-8
 

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ME8107-G Datasheet (PDF)

 ..1. Size:1191K  matsuki electric
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ME8107-G

ME8107/ME8107-G P-Channel 35V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME8107-G is the P-Channel logic enhancement mode power RDS(ON)7.2m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)12m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for e

 8.1. Size:819K  cn vbsemi
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ME8107-G

ME8107www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S

Datasheet: ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 , IRLB4132 , ME8205E , ME8205E-G , ME85P03 , ME85P03-G , ME90N03 , ME90N03-G , ME9435 , ME9435-G .

History: NVMTS0D6N04C | SI7623DN

Keywords - ME8107-G MOSFET datasheet

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