ME85P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME85P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 432 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
ME85P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME85P03 Datasheet (PDF)
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me85p03 me85p03-g.pdf
me85p03 me85p03-g.pdf
ME85P03/ ME85P03-G P- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME85P03 is the P-Channel logic enhancement mode power field RDS(ON)8m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)11m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low R
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
