All MOSFET. ME85P03-G Datasheet

 

ME85P03-G Datasheet and Replacement


   Type Designator: ME85P03-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 432 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252
 

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ME85P03-G Datasheet (PDF)

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ME85P03-G

ME85P03/ ME85P03-G P- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME85P03 is the P-Channel logic enhancement mode power field RDS(ON)8m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)11m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low R

Datasheet: ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 , ME8107-G , ME8205E , ME8205E-G , ME85P03 , IRF1407 , ME90N03 , ME90N03-G , ME9435 , ME9435-G , ME9435A , ME9435A-G , ME95N03 , ME95N03-G .

History: BUZ73AL | SSM3K329R | PMPB12UNEA | MP4N150

Keywords - ME85P03-G MOSFET datasheet

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