ME85P03-G MOSFET Datasheet: P-Ch, 30V, 80A. Full specification with pinout and replacement list

ME85P03-G Specs and Replacement

Type Designator: ME85P03-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 432 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-252

ME85P03-G substitution

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ME85P03-G datasheet

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ME85P03/ ME85P03-G P- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME85P03 is the P-Channel logic enhancement mode power field RDS(ON) 8m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 11m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low R... See More ⇒

Detailed specifications: ME80N75F-G, ME80N75T, ME80N75T-G, ME8107, ME8107-G, ME8205E, ME8205E-G, ME85P03, IRFP450, ME90N03, ME90N03-G, ME9435, ME9435-G, ME9435A, ME9435A-G, ME95N03, ME95N03-G