All MOSFET. ME90N03-G Datasheet

 

ME90N03-G Datasheet and Replacement


   Type Designator: ME90N03-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-252
 

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ME90N03-G Datasheet (PDF)

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ME90N03-G

ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME90N03 is the N-Channel logic enhancement mode power RDS(ON)4.8m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)9m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state resis

Datasheet: ME80N75T-G , ME8107 , ME8107-G , ME8205E , ME8205E-G , ME85P03 , ME85P03-G , ME90N03 , IRFP450 , ME9435 , ME9435-G , ME9435A , ME9435A-G , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G .

History: SFS06R06GF | IRF7751GTR | PM5G8EA | LBSS84DW1T1G | BSS123LT1G | 2SK2320 | AP4511GH

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