All MOSFET. ME90N03-G Datasheet

 

ME90N03-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME90N03-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-252

 ME90N03-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME90N03-G Datasheet (PDF)

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 me90n03 me90n03-g.pdf

ME90N03-G ME90N03-G

ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME90N03 is the N-Channel logic enhancement mode power RDS(ON)4.8m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)9m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state resis

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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