ME90N03-G PDF and Equivalents Search

 

ME90N03-G Specs and Replacement

Type Designator: ME90N03-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 74 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO-252

ME90N03-G substitution

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ME90N03-G datasheet

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 me90n03 me90n03-g.pdf pdf_icon

ME90N03-G

ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME90N03 is the N-Channel logic enhancement mode power RDS(ON) 4.8m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 9m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state resis... See More ⇒

Detailed specifications: ME80N75T-G, ME8107, ME8107-G, ME8205E, ME8205E-G, ME85P03, ME85P03-G, ME90N03, AO4407, ME9435, ME9435-G, ME9435A, ME9435A-G, ME95N03, ME95N03-G, ME95N03T, ME95N03T-G

Keywords - ME90N03-G MOSFET specs

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