MEE15N10-G PDF and Equivalents Search

 

MEE15N10-G Specs and Replacement

Type Designator: MEE15N10-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.8 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-252

MEE15N10-G substitution

- MOSFET ⓘ Cross-Reference Search

 

MEE15N10-G datasheet

 ..1. Size:2343K  matsuki electric
 mee15n10-g.pdf pdf_icon

MEE15N10-G

MEE15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE15N10-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC current Gate(ETG) technology. This advanced technology is esp... See More ⇒

Detailed specifications: ME9435, ME9435-G, ME9435A, ME9435A-G, ME95N03, ME95N03-G, ME95N03T, ME95N03T-G, SI2302, MEE3710-G, MEE4294-G, MESS84, JCS10N60BT, JCS10N60CC, JCS10N60CT, JCS10N60FC, JCS10N60FT

Keywords - MEE15N10-G MOSFET specs

 MEE15N10-G cross reference

 MEE15N10-G equivalent finder

 MEE15N10-G pdf lookup

 MEE15N10-G substitution

 MEE15N10-G replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.