All MOSFET. MEE15N10-G Datasheet

 

MEE15N10-G Datasheet and Replacement


   Type Designator: MEE15N10-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-252
 

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MEE15N10-G Datasheet (PDF)

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MEE15N10-G

MEE15N10-G N-Channel 100-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE15N10-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology is esp

Datasheet: ME9435 , ME9435-G , ME9435A , ME9435A-G , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G , SI2302 , MEE3710-G , MEE4294-G , MESS84 , JCS10N60BT , JCS10N60CC , JCS10N60CT , JCS10N60FC , JCS10N60FT .

History: IRF7205PBF-1 | ME95N03T-G | ME90N03 | ME6968ED | ME6980ED | MEE72962-G | 2N65G-T60-K

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