All MOSFET. MEE15N10-G Datasheet

 

MEE15N10-G Datasheet and Replacement


   Type Designator: MEE15N10-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

MEE15N10-G Datasheet (PDF)

 ..1. Size:2343K  matsuki electric
 mee15n10-g.pdf pdf_icon

MEE15N10-G

MEE15N10-G N-Channel 100-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE15N10-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology is esp

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK1426 | HSH15810 | AP3P7R0EMT | STK0170 | NVTFS6H850N | NCE0115AK | 2SK823

Keywords - MEE15N10-G MOSFET datasheet

 MEE15N10-G cross reference
 MEE15N10-G equivalent finder
 MEE15N10-G lookup
 MEE15N10-G substitution
 MEE15N10-G replacement

 

 
Back to Top

 


 
.