All MOSFET. MEE15N10-G Datasheet

 

MEE15N10-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEE15N10-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.5 nC
   trⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-252

 MEE15N10-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE15N10-G Datasheet (PDF)

 ..1. Size:2343K  matsuki electric
 mee15n10-g.pdf

MEE15N10-G MEE15N10-G

MEE15N10-G N-Channel 100-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE15N10-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology is esp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top