KCF3650A MOSFET. Datasheet pdf. Equivalent
Type Designator: KCF3650A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 148 nS
Cossⓘ - Output Capacitance: 4400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TO-220F
KCF3650A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KCF3650A Datasheet (PDF)
..1. Size:160K kia
kcf3650a kcm3650a.pdf
kcf3650a kcm3650a.pdf
60A500VKCX3650AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis high voltage MOSFETuses an advanced termination schemeto provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced MOSFET isdesigned to withstand high energy in avalanche and commutation modes. The newenergy efficient
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