KIA10N80H-3P MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA10N80H-3P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 305 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 63 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO3P
KIA10N80H-3P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA10N80H-3P Datasheet (PDF)
kia10n80h.pdf
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kia10n65h.pdf
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