KIA10N80H-3P MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

KIA10N80H-3P Specs and Replacement

Type Designator: KIA10N80H-3P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 305 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO3P

KIA10N80H-3P substitution

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KIA10N80H-3P datasheet

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10A 800V 10N80H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device... See More ⇒

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10A 650V 10N65H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA10N65HN-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lampballasts based on half bridge to pology. 2. ... See More ⇒

Detailed specifications: KCF3650A, KCM3650A, KCF9860A, KCM9860A, KCY3104S, KCY3303S, KIA10N65H, KIA10N80H-220F, K2611, KIA12N60H-220, KIA12N60H-220F, KIA12N65H, KIA13N50H-220, KIA13N50H-220F, KIA13N50H-263, KIA18N50H-220F, KIA18N50H-247