KIA20N50H-220F Datasheet. Specs and Replacement

Type Designator: KIA20N50H-220F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO220F

KIA20N50H-220F substitution

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KIA20N50H-220F datasheet

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KIA20N50H-220F

20A 500V 20N50H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA20N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction. 2. Features R =0.21 @V =10V DS(on) GS Lowgate ch... See More ⇒

Detailed specifications: KIA12N60H-220, KIA12N60H-220F, KIA12N65H, KIA13N50H-220, KIA13N50H-220F, KIA13N50H-263, KIA18N50H-220F, KIA18N50H-247, IRF730, KIA20N50H-247, KIA20N50H-3P, KIA2300, KIA2301, KIA2302, KIA2305, KIA2306, KIA2404A-220

Keywords - KIA20N50H-220F MOSFET specs

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