KIA20N50H-3P Datasheet and Replacement
Type Designator: KIA20N50H-3P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO3P
KIA20N50H-3P substitution
KIA20N50H-3P Datasheet (PDF)
kia20n50h.pdf

20A500V20N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA20N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.21 @V =10VDS(on) GS Lowgate ch
Datasheet: KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , KIA13N50H-263 , KIA18N50H-220F , KIA18N50H-247 , KIA20N50H-220F , KIA20N50H-247 , IRF3205 , KIA2300 , KIA2301 , KIA2302 , KIA2305 , KIA2306 , KIA2404A-220 , KIA2404A-247 , KIA24N50H .
History: STS2301 | R6008FNX | TK16J60W | MMDF3N04HD | SQM110N04-04 | SST65R1K2S2E | SFP055N80C2
Keywords - KIA20N50H-3P MOSFET datasheet
KIA20N50H-3P cross reference
KIA20N50H-3P equivalent finder
KIA20N50H-3P lookup
KIA20N50H-3P substitution
KIA20N50H-3P replacement
History: STS2301 | R6008FNX | TK16J60W | MMDF3N04HD | SQM110N04-04 | SST65R1K2S2E | SFP055N80C2



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