All MOSFET. KIA20N50H-3P Datasheet

 

KIA20N50H-3P Datasheet and Replacement


   Type Designator: KIA20N50H-3P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 400 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO3P
 

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KIA20N50H-3P Datasheet (PDF)

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KIA20N50H-3P

20A500V20N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA20N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.21 @V =10VDS(on) GS Lowgate ch

Datasheet: KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , KIA13N50H-263 , KIA18N50H-220F , KIA18N50H-247 , KIA20N50H-220F , KIA20N50H-247 , IRF3205 , KIA2300 , KIA2301 , KIA2302 , KIA2305 , KIA2306 , KIA2404A-220 , KIA2404A-247 , KIA24N50H .

History: IPI120N04S4-01 | HCU7NE70S | OSG80R190HF | QM6006F | MTEF1P15Q8 | SM4480

Keywords - KIA20N50H-3P MOSFET datasheet

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