All MOSFET. KIA24N50H Datasheet

 

KIA24N50H Datasheet and Replacement


   Type Designator: KIA24N50H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3P
 

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KIA24N50H Datasheet (PDF)

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KIA24N50H

24A500V24N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIAadvanced planar stripe DMOS technology. This advancedtechnology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. The

 9.1. Size:380K  kia
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KIA24N50H

190A40V2404AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications DC-DCconverters and Off-line UPS Switching applications2. Features R =2.2m @V =10 VDS(on) (TYP) GSSuper high dense cell design Ultra lowon-resistance 100%avalanchetest Lead free and green devices available (RoHScompliant)3. PinconfigurationPin Function1 Ga

Datasheet: KIA20N50H-3P , KIA2300 , KIA2301 , KIA2302 , KIA2305 , KIA2306 , KIA2404A-220 , KIA2404A-247 , IRFZ44 , KIA2803A-220 , KIA2803A-263 , KIA2808A-263 , KIA2808A-220 , KIA2808A-247 , KIA2808A-3P , KIA2906A-247 , KIA2906A-220 .

History: FQPF10N60CT | IRLML2502G | WMO07N60C4 | APT10M09B2VR | SIS472DN | CSD87588N | IPL65R725CFD

Keywords - KIA24N50H MOSFET datasheet

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