FTX15N35G Datasheet. Specs and Replacement

Type Designator: FTX15N35G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 5.36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: SOT89

FTX15N35G substitution

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FTX15N35G datasheet

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FTX15N35G

FTX15N35G 350V N-Channel Enhancement Mode MOSFET General Features Proprietary Advanced Planar Technology BVDSS RDS(ON) (Max.) ID Rugged Polysilicon Gate Cell Structure Fast Switching Speed 350V 15 200mA RoHS Compliant Halogen-free available SOT-89 D Applications Drain High Efficiency SMPS G Adaptor/Charger Gate Active PFC Drai... See More ⇒

Detailed specifications: KIA24N50H, KIA2803A-220, KIA2803A-263, KIA2808A-263, KIA2808A-220, KIA2808A-247, KIA2808A-3P, KIA2906A-247, IRFB4227, KIA2910A-220, KIA2910A-263, KIA2910A-3P, KIA2910N-220, KIA2910N-263, KIA2910N-3P, KIA2N60H-251, KIA2N60H-252

Keywords - FTX15N35G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs