All MOSFET. KIA2N60H-251 Datasheet

 

KIA2N60H-251 Datasheet and Replacement


   Type Designator: KIA2N60H-251
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO251
 

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KIA2N60H-251 Datasheet (PDF)

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KIA2N60H-251

2.0A, 600VN-CHANNELMOSFET2N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA2N60HN-Channel enhancement mode silicon gate power MOSFET is designed forhigh voltage, high speed power switching applications such as switchingregulators, switchingconverters,solenoid, motor drivers, relay drivers.2. Features R =4.1@V =10V.DS(ON) GS Lowgate cha

Datasheet: KIA2906A-247 , KIA2906A-220 , KIA2910A-220 , KIA2910A-263 , KIA2910A-3P , KIA2910N-220 , KIA2910N-263 , KIA2910N-3P , 2SK3878 , KIA2N60H-252 , KIA2N60H-220 , KIA2N60H-220F , KIA30N06B , KIA3205S , KIA3308A-252 , KIA3308A-263 , KIA3308A-247 .

History: WMX12N120D1 | SRT03N011L | SSP60R190SFD2 | SI7100DN | KIA3510A-263 | SFP70N06 | IPN60R360P7S

Keywords - KIA2N60H-251 MOSFET datasheet

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