All MOSFET. KIA30N06B Datasheet

 

KIA30N06B Datasheet and Replacement


   Type Designator: KIA30N06B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 72.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO251 TO252
 

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KIA30N06B Datasheet (PDF)

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KIA30N06B

25A60V30N06BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA30N06B is the highest performance trench N-ch MOSFETs with extreme high celldensity,which provide excellent RDSON and gate charge for most of the synchronous buck converterapplications.The KIA30N06Bmeet the RoHSand Green Product requirenment,100%EAS guaranteed withfull

Datasheet: KIA2910A-3P , KIA2910N-220 , KIA2910N-263 , KIA2910N-3P , KIA2N60H-251 , KIA2N60H-252 , KIA2N60H-220 , KIA2N60H-220F , K3569 , KIA3205S , KIA3308A-252 , KIA3308A-263 , KIA3308A-247 , KIA3400 , KIA3401 , KIA3402 , KIA3407 .

History: HSBA3062 | IPI80N06S3-07

Keywords - KIA30N06B MOSFET datasheet

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