KIA30N06B MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA30N06B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.56 nC
trⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 72.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO251 TO252
KIA30N06B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA30N06B Datasheet (PDF)
..1. Size:124K kia
kia30n06b.pdf
kia30n06b.pdf
25A60V30N06BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA30N06B is the highest performance trench N-ch MOSFETs with extreme high celldensity,which provide excellent RDSON and gate charge for most of the synchronous buck converterapplications.The KIA30N06Bmeet the RoHSand Green Product requirenment,100%EAS guaranteed withfull
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
