KIA3510A-252 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA3510A-252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 339 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
KIA3510A-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA3510A-252 Datasheet (PDF)
6.1. Size:295K kia
kia3510a.pdf
kia3510a.pdf
75A100V3510AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =9mtyp.@V =10VDS(on) GS 100% avalanche tested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1
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