KIA3510A-252 Datasheet and Replacement
Type Designator: KIA3510A-252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 339 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
KIA3510A-252 substitution
KIA3510A-252 Datasheet (PDF)
kia3510a.pdf

75A100V3510AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =9mtyp.@V =10VDS(on) GS 100% avalanche tested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1
Datasheet: KIA3308A-247 , KIA3400 , KIA3401 , KIA3402 , KIA3407 , KIA3414 , KIA3415 , KIA3510A-220 , AON7410 , KIA3510A-263 , KIA4603A , KIA4706A , KIA4750S-252 , KIA4750S-220 , KIA4N60H-251 , KIA4N60H-252 , KIA4N60H-220 .
History: WMO26N60F2 | IPI80N06S3-07 | SFP830 | HSBA3062 | NCE30P50G | NTTFS5C680NL | STH240N10F7-2
Keywords - KIA3510A-252 MOSFET datasheet
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History: WMO26N60F2 | IPI80N06S3-07 | SFP830 | HSBA3062 | NCE30P50G | NTTFS5C680NL | STH240N10F7-2



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