All MOSFET. KIA4750S-252 Datasheet

 

KIA4750S-252 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA4750S-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252

 KIA4750S-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA4750S-252 Datasheet (PDF)

 6.1. Size:363K  kia
 kia4750s.pdf

KIA4750S-252 KIA4750S-252

9A500VN-CHANNELMOSFET4750SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications Adaptor Charger SMPSStandby Power2. Features RoHSCompliant R =0.7 @V =10 VDS(on) GSLowgate charge minimize switching loss Fast recovery body diode3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.0Mar. 20169A500VN-CHANNE

 9.1. Size:223K  kia
 kia4706a.pdf

KIA4750S-252 KIA4750S-252

8A60V4706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =10m(typ)@ V =10 VDS(on) GS Super low gate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KIA4706Ais the high cell density trenched N-ch MOSFETs, which provide excellent RDSONand gate charge

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOW10T60P | PDS3812 | FCPF400N80ZL1

 

 
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