KIA4750S-252 Datasheet and Replacement
Type Designator: KIA4750S-252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO252
KIA4750S-252 substitution
KIA4750S-252 Datasheet (PDF)
kia4750s.pdf

9A500VN-CHANNELMOSFET4750SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications Adaptor Charger SMPSStandby Power2. Features RoHSCompliant R =0.7 @V =10 VDS(on) GSLowgate charge minimize switching loss Fast recovery body diode3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.0Mar. 20169A500VN-CHANNE
kia4706a.pdf

8A60V4706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =10m(typ)@ V =10 VDS(on) GS Super low gate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KIA4706Ais the high cell density trenched N-ch MOSFETs, which provide excellent RDSONand gate charge
Datasheet: KIA3407 , KIA3414 , KIA3415 , KIA3510A-220 , KIA3510A-252 , KIA3510A-263 , KIA4603A , KIA4706A , RFP50N06 , KIA4750S-220 , KIA4N60H-251 , KIA4N60H-252 , KIA4N60H-220 , KIA4N60H-220F , KIA4N60H-262 , KIA4N65H-251 , KIA4N65H-252 .
History: NDT451AN | SSF5NS70UF | SSF6014 | SI6466ADQ | KMB4D8DN55Q | WMS032N04LG2 | IRFBA1405PPBF
Keywords - KIA4750S-252 MOSFET datasheet
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History: NDT451AN | SSF5NS70UF | SSF6014 | SI6466ADQ | KMB4D8DN55Q | WMS032N04LG2 | IRFBA1405PPBF



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