All MOSFET. KIA5610A Datasheet

 

KIA5610A MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA5610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.6 nC
   trⓘ - Rise Time: 30.6 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT89

 KIA5610A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA5610A Datasheet (PDF)

 ..1. Size:200K  kia
 kia5610a.pdf

KIA5610A KIA5610A

5.4A100V5610AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesThe KIA5610 is the highest performance trench N-ch MOSFETS with extreme high cell density,which provide excellent RDSONand gate charge for most of the synchronous buck converter applications.The KIA5610 meet the RoHSand green product requirement2. Features R =310m@V =10V

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