All MOSFET. KIA5610A Datasheet

 

KIA5610A Datasheet and Replacement


   Type Designator: KIA5610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.6 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT89
 

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KIA5610A Datasheet (PDF)

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KIA5610A

5.4A100V5610AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesThe KIA5610 is the highest performance trench N-ch MOSFETS with extreme high cell density,which provide excellent RDSONand gate charge for most of the synchronous buck converter applications.The KIA5610 meet the RoHSand green product requirement2. Features R =310m@V =10V

Datasheet: KIA4N65H-252 , KIA4N65H-220 , KIA4N65H-220F , KIA50N03-251 , KIA50N03-252 , KIA50N03-220 , KIA50N03BD , KIA50N06B-220 , STF13NM60N , KIA5N60E , KIA6035A , KIA65R190 , KIA65R300 , KIA65R420 , KIA65R700 , KIA65R950 , KIA6N70H-251 .

Keywords - KIA5610A MOSFET datasheet

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