KIA5610A Specs and Replacement

Type Designator: KIA5610A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.6 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: SOT89

KIA5610A substitution

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KIA5610A datasheet

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KIA5610A

5.4A 100V 5610A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features The KIA5610 is the highest performance trench N-ch MOSFETS with extreme high cell density, which provide excellent RDSONand gate charge for most of the synchronous buck converter applications. The KIA5610 meet the RoHSand green product requirement 2. Features R =310m @V =10V... See More ⇒

Detailed specifications: KIA4N65H-252, KIA4N65H-220, KIA4N65H-220F, KIA50N03-251, KIA50N03-252, KIA50N03-220, KIA50N03BD, KIA50N06B-220, IRFP250, KIA5N60E, KIA6035A, KIA65R190, KIA65R300, KIA65R420, KIA65R700, KIA65R950, KIA6N70H-251

Keywords - KIA5610A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.