KIA5N60E Specs and Replacement

Type Designator: KIA5N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 16 nC

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220 TO252

KIA5N60E substitution

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KIA5N60E datasheet

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KIA5N60E

4.5A600V N-CHANNELMOSFET 5N60E KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description These N-Channel enhancement mode power field effect transistors are produced using KIA s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy p... See More ⇒

Detailed specifications: KIA4N65H-220, KIA4N65H-220F, KIA50N03-251, KIA50N03-252, KIA50N03-220, KIA50N03BD, KIA50N06B-220, KIA5610A, IRF1407, KIA6035A, KIA65R190, KIA65R300, KIA65R420, KIA65R700, KIA65R950, KIA6N70H-251, KIA6N70H-252

Keywords - KIA5N60E MOSFET specs

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