KIA5N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA5N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220 TO252
KIA5N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA5N60E Datasheet (PDF)
..1. Size:382K kia
kia5n60e.pdf
kia5n60e.pdf
4.5A600VN-CHANNELMOSFET5N60EKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThese N-Channel enhancement mode power field effect transistors are produced using KIAsproprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance, and withstand high energy p
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