All MOSFET. KIA5N60E Datasheet

 

KIA5N60E Datasheet and Replacement


   Type Designator: KIA5N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220 TO252
 

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KIA5N60E Datasheet (PDF)

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KIA5N60E

4.5A600VN-CHANNELMOSFET5N60EKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThese N-Channel enhancement mode power field effect transistors are produced using KIAsproprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance, and withstand high energy p

Datasheet: KIA4N65H-220 , KIA4N65H-220F , KIA50N03-251 , KIA50N03-252 , KIA50N03-220 , KIA50N03BD , KIA50N06B-220 , KIA5610A , P0903BDG , KIA6035A , KIA65R190 , KIA65R300 , KIA65R420 , KIA65R700 , KIA65R950 , KIA6N70H-251 , KIA6N70H-252 .

History: WPM2341A-3-TR | NCEP070N12D

Keywords - KIA5N60E MOSFET datasheet

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