All MOSFET. KIA6N70H-252 Datasheet

 

KIA6N70H-252 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA6N70H-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO252

 KIA6N70H-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA6N70H-252 Datasheet (PDF)

 6.1. Size:203K  kia
 kia6n70h.pdf

KIA6N70H-252 KIA6N70H-252

5.8A,700VN-CHANNELMOSFET6N70HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using Maple semis advanced planar stripe DMOStechnology.This advanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP2307GN-HF | CS1N60B3R

 

 
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