All MOSFET. KIA840S-252 Datasheet

 

KIA840S-252 Datasheet and Replacement


   Type Designator: KIA840S-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252
 

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KIA840S-252 Datasheet (PDF)

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KIA840S-252

8A500V840SN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =0.7 (typ) @V =10VDS(ON) GS RoHS compliant Low on resistance Low gate charge Peak current vs pulse width curve2. Applications Adaptor TVmain power SMPSpower supply LCDpanel power3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1 of 6 Rev 1.2 JAN2016

Datasheet: KIA75NF75 , KIA7N60H-220 , KIA7N60H-220F , KIA7N60H-262 , KIA7N60H-263 , KIA7N60U , KIA7N80H-220 , KIA7N80H-220F , RU7088R , KIA840S-263 , KIA840S-220 , KIA8N60H-220 , KIA8N60H-220F , KNB1906A , KNB2404A , KNB2708A , KNB2710A .

History: WMQ048NV6LG4 | IRLZ34SPBF

Keywords - KIA840S-252 MOSFET datasheet

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