All MOSFET. KNB2710A Datasheet

 

KNB2710A MOSFET. Datasheet pdf. Equivalent


   Type Designator: KNB2710A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 132 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263

 KNB2710A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KNB2710A Datasheet (PDF)

 ..1. Size:581K  kia
 knb2710a.pdf

KNB2710A KNB2710A

160A100VN-CHANNELMOSFETKNX2710AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.5 m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2

 9.1. Size:462K  kia
 knp2708a knb2708a.pdf

KNB2710A KNB2710A

160A80VKNX2708AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.0m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D

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