KNB2710A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNB2710A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 132 nS
Cossⓘ - Output Capacitance: 760 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO263
KNB2710A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNB2710A Datasheet (PDF)
knb2710a.pdf
160A100VN-CHANNELMOSFETKNX2710AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.5 m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2
knp2708a knb2708a.pdf
160A80VKNX2708AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.0m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D
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