KNB2710A Datasheet and Replacement
Type Designator: KNB2710A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 132 nS
Cossⓘ - Output Capacitance: 760 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO263
KNB2710A substitution
KNB2710A Datasheet (PDF)
knb2710a.pdf

160A100VN-CHANNELMOSFETKNX2710AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.5 m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2
knp2708a knb2708a.pdf

160A80VKNX2708AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =4.0m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D
Datasheet: KIA840S-252 , KIA840S-263 , KIA840S-220 , KIA8N60H-220 , KIA8N60H-220F , KNB1906A , KNB2404A , KNB2708A , 2SK3918 , KNB2803A , KNB2804A , KNB2804C , KNB2906A , KNB2910A , KNB2915A , KNB3204A , KNB3206A .
History: NCEP055N60GU | NP60N04MUG | HSBA3058 | STI60N55F3 | SNN4010D | NTTFS4C10N | IRFB7446PBF
Keywords - KNB2710A MOSFET datasheet
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History: NCEP055N60GU | NP60N04MUG | HSBA3058 | STI60N55F3 | SNN4010D | NTTFS4C10N | IRFB7446PBF



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