All MOSFET. KNB3308B Datasheet

 

KNB3308B MOSFET. Datasheet pdf. Equivalent


   Type Designator: KNB3308B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263

 KNB3308B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KNB3308B Datasheet (PDF)

 ..1. Size:280K  kia
 knb3308b.pdf

KNB3308B KNB3308B

80A80VN-CHANNELMOSFETKNX3308BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.2m(typ)@V =10VDS(ON) GS Lead free and green device available LowRds-onto minimize conductive loss High avalanchecurrent2. Applications Power supply DC-DCconverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1 of 6 Rev1.0Aug. 201880A80V

 8.1. Size:283K  kia
 knd3306b knb3306b.pdf

KNB3308B KNB3308B

80A60VN-CHANNELMOSFET3306BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)=7m typ@VGS=10V Lead free and Green DeviceAvailable LowRds-onto Minimize ConductiveLoss High avalancheCurrent2. Application Power Supply DC-DCConverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1 of 6 Rev1.0Sep.201780A60VN-CHANNELMOSFET3

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KIA3308A-263

 

 
Back to Top