KNB3308B Datasheet and Replacement
Type Designator: KNB3308B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO263
KNB3308B substitution
KNB3308B Datasheet (PDF)
knb3308b.pdf

80A80VN-CHANNELMOSFETKNX3308BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.2m(typ)@V =10VDS(ON) GS Lead free and green device available LowRds-onto minimize conductive loss High avalanchecurrent2. Applications Power supply DC-DCconverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1 of 6 Rev1.0Aug. 201880A80V
knd3306b knb3306b.pdf

80A60VN-CHANNELMOSFET3306BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)=7m typ@VGS=10V Lead free and Green DeviceAvailable LowRds-onto Minimize ConductiveLoss High avalancheCurrent2. Application Power Supply DC-DCConverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1 of 6 Rev1.0Sep.201780A60VN-CHANNELMOSFET3
Datasheet: KNB2804C , KNB2906A , KNB2910A , KNB2915A , KNB3204A , KNB3206A , KNB3208A , KNB3306B , IRF740 , KNB3508A , KND2803A , KND2804A , KND2906A , KND3203B , KND3204A , KND3206A , KND3208A .
History: SWF8N65DB | IRFB4137PBF
Keywords - KNB3308B MOSFET datasheet
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History: SWF8N65DB | IRFB4137PBF



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