All MOSFET. KND3306B Datasheet

 

KND3306B Datasheet and Replacement


   Type Designator: KND3306B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 84.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
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KND3306B Datasheet (PDF)

 ..1. Size:283K  kia
 knd3306b knb3306b.pdf pdf_icon

KND3306B

80A60VN-CHANNELMOSFET3306BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)=7m typ@VGS=10V Lead free and Green DeviceAvailable LowRds-onto Minimize ConductiveLoss High avalancheCurrent2. Application Power Supply DC-DCConverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1 of 6 Rev1.0Sep.201780A60VN-CHANNELMOSFET3

 8.1. Size:236K  kia
 knd3302a.pdf pdf_icon

KND3306B

85A20VKNX3302AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KNX3302A uses advanced trench technology to provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or inother Switching applications.2. Features R =3.8m(typ.) @V =4.5VDS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME7644 | SJMN380R65MD | IRF9Z24NL | FQD4P40TM | IRFI9634GPBF | BSS84 | ME7890ED-G

Keywords - KND3306B MOSFET datasheet

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