All MOSFET. KND3306B Datasheet

 

KND3306B MOSFET. Datasheet pdf. Equivalent


   Type Designator: KND3306B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 84.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252

 KND3306B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KND3306B Datasheet (PDF)

 ..1. Size:283K  kia
 knd3306b knb3306b.pdf

KND3306B KND3306B

80A60VN-CHANNELMOSFET3306BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)=7m typ@VGS=10V Lead free and Green DeviceAvailable LowRds-onto Minimize ConductiveLoss High avalancheCurrent2. Application Power Supply DC-DCConverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1 of 6 Rev1.0Sep.201780A60VN-CHANNELMOSFET3

 8.1. Size:236K  kia
 knd3302a.pdf

KND3306B KND3306B

85A20VKNX3302AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KNX3302A uses advanced trench technology to provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or inother Switching applications.2. Features R =3.8m(typ.) @V =4.5VDS

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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