KND3508A MOSFET. Datasheet pdf. Equivalent
Type Designator: KND3508A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
KND3508A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KND3508A Datasheet (PDF)
knb3508a knd3508a knp3508a.pdf
70A80V3508AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =9.5mtyp.@V =10VDS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1o
knd3502a.pdf
70A20VKNX3502AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KNX3502A uses advanced trench technology to provide excellent R , low gate charge andDS(ON)operationwithgatevoltages as lowas 2.5V. This deviceis suitablefor useas awidevariety of applications.2. Features R =7m(typ.) @V =4.5VDS(on) DS High power and current hand
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