KND3508A Specs and Replacement
Type Designator: KND3508A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 55 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
KND3508A substitution
- MOSFET ⓘ Cross-Reference Search
KND3508A datasheet
knb3508a knd3508a knp3508a.pdf
70A 80V 3508A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =9.5m typ. @V =10V DS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device available RoHSCompliant 2. Applications Switching application Power management for inverter systems 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1o... See More ⇒
knd3502a.pdf
70A 20V KNX3502A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KNX3502A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operationwithgatevoltages as lowas 2.5V. This deviceis suitablefor useas awidevariety of applications. 2. Features R =7m (typ.) @V =4.5V DS(on) DS High power and current hand... See More ⇒
Detailed specifications: KND3208A, KND3302A, KND3306B, KND3403A, KND3404B, KND3404C, KND3406C, KND3502A, IRF3710, KND3706A, KND4360A, KND4365A, KND4665B, KND4820B, KND6610A, KND8103A, KND8606A
Keywords - KND3508A MOSFET specs
KND3508A cross reference
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