All MOSFET. KND3706A Datasheet

 

KND3706A Datasheet and Replacement


   Type Designator: KND3706A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

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KND3706A Datasheet (PDF)

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KND3706A

50A60VKNX3706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =9m@V 10VDS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R andDS(ON)gate charge for

Datasheet: KND3302A , KND3306B , KND3403A , KND3404B , KND3404C , KND3406C , KND3502A , KND3508A , IRFB4227 , KND4360A , KND4365A , KND4665B , KND4820B , KND6610A , KND8103A , KND8606A , KNE4603A2 .

History: WMQ023N03LG2 | MTB40P04J3 | RF1K49093 | STB30NF20L | RD06HHF1 | KIA50N06 | IRLZ44ZPBF

Keywords - KND3706A MOSFET datasheet

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