KND3706A Specs and Replacement

Type Designator: KND3706A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

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KND3706A datasheet

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 knp3706a knd3706a.pdf pdf_icon

KND3706A

50A 60V KNX3706A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R =9m @V 10V DS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology 2.Description The KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R and DS(ON) gate charge for... See More ⇒

Detailed specifications: KND3302A, KND3306B, KND3403A, KND3404B, KND3404C, KND3406C, KND3502A, KND3508A, 10N60, KND4360A, KND4365A, KND4665B, KND4820B, KND6610A, KND8103A, KND8606A, KNE4603A2

Keywords - KND3706A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.