KND3706A Datasheet and Replacement
Type Designator: KND3706A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 255 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
KND3706A substitution
KND3706A Datasheet (PDF)
knp3706a knd3706a.pdf
50A60VKNX3706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =9m@V 10VDS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R andDS(ON)gate charge for
Datasheet: KND3302A , KND3306B , KND3403A , KND3404B , KND3404C , KND3406C , KND3502A , KND3508A , 10N60 , KND4360A , KND4365A , KND4665B , KND4820B , KND6610A , KND8103A , KND8606A , KNE4603A2 .
History: AM7000N | IRFD010 | AP4415GH | 8N65KG-TA3-T | PMV30XN | 8N60G-TF3-T
Keywords - KND3706A MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AM7000N | IRFD010 | AP4415GH | 8N65KG-TA3-T | PMV30XN | 8N60G-TF3-T
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