KND3706A MOSFET. Datasheet pdf. Equivalent
Type Designator: KND3706A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 255 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
KND3706A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KND3706A Datasheet (PDF)
..1. Size:198K kia
knp3706a knd3706a.pdf
knp3706a knd3706a.pdf
50A60VKNX3706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =9m@V 10VDS(ON),typ. GS= 100%EASguaranteed Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNX3706Ais the high cell density trenched N-ch MOSFET,which provide excellent R andDS(ON)gate charge for
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
