KND4820B MOSFET. Datasheet pdf. Equivalent
Type Designator: KND4820B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 94 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
KND4820B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KND4820B Datasheet (PDF)
knu4820b knd4820b.pdf
9.0A200VN-CHANNELMOSFET KNX4820BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS`1. DescriptionTheKNX4820B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Fe
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