All MOSFET. KND4820B Datasheet

 

KND4820B Datasheet and Replacement


   Type Designator: KND4820B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252
 

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KND4820B Datasheet (PDF)

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KND4820B

9.0A200VN-CHANNELMOSFET KNX4820BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS`1. DescriptionTheKNX4820B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Fe

Datasheet: KND3404C , KND3406C , KND3502A , KND3508A , KND3706A , KND4360A , KND4365A , KND4665B , IRFB4115 , KND6610A , KND8103A , KND8606A , KNE4603A2 , KNE6303A , KNE7306A , KNF3725A , KNF4360A .

History: IPI65R660CFD | STP7NK40Z | SSB80R500S | IPI90R1K2C3 | SWF16N60D | SSM9926GEO | KMA3D0N20SA

Keywords - KND4820B MOSFET datasheet

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