KND4820B Specs and Replacement

Type Designator: KND4820B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 28 nC

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO252

KND4820B substitution

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KND4820B datasheet

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 knu4820b knd4820b.pdf pdf_icon

KND4820B

9.0A 200V N-CHANNELMOSFET KNX4820B KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description TheKNX4820B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology 2. Fe... See More ⇒

Detailed specifications: KND3404C, KND3406C, KND3502A, KND3508A, KND3706A, KND4360A, KND4365A, KND4665B, P55NF06, KND6610A, KND8103A, KND8606A, KNE4603A2, KNE6303A, KNE7306A, KNF3725A, KNF4360A

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.