KND6610A Specs and Replacement

Type Designator: KND6610A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

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KND6610A datasheet

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KND6610A

15A 100V N-CHANNELMOSFET KNX6610A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features The KNX6610Ais the highest performance trench N-ch MOSFETSwith extreme high cell density, which provide excellent RDSONand gate charge for most of the synchronous buck converter applications. The KNX6610A meet the RoHSand green product requirement, 100%EASguaranteed with full func... See More ⇒

Detailed specifications: KND3406C, KND3502A, KND3508A, KND3706A, KND4360A, KND4365A, KND4665B, KND4820B, 8205A, KND8103A, KND8606A, KNE4603A2, KNE6303A, KNE7306A, KNF3725A, KNF4360A, KNF4365A

Keywords - KND6610A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.