All MOSFET. KND6610A Datasheet

 

KND6610A Datasheet and Replacement


   Type Designator: KND6610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252
 

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KND6610A Datasheet (PDF)

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KND6610A

15A100VN-CHANNELMOSFET KNX6610AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesThe KNX6610Ais the highest performance trench N-ch MOSFETSwith extreme high cell density,which provide excellent RDSONand gate charge for most of the synchronous buck converter applications.The KNX6610A meet the RoHSand green product requirement, 100%EASguaranteed with full func

Datasheet: KND3406C , KND3502A , KND3508A , KND3706A , KND4360A , KND4365A , KND4665B , KND4820B , 2SK3878 , KND8103A , KND8606A , KNE4603A2 , KNE6303A , KNE7306A , KNF3725A , KNF4360A , KNF4365A .

History: WM4C62160A

Keywords - KND6610A MOSFET datasheet

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