KND8103A Datasheet and Replacement
Type Designator: KND8103A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 81 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO252
KND8103A substitution
KND8103A Datasheet (PDF)
knd8103a knu8103a.pdf

30A30VKNX8103AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA-8103Ais the highest performance trench N-ch MOSFETs with extreme high celldensity,which provide excellent RDSON and gate charge for most of the synchronous buck converterapplications.The KIA30N03Bmeet the RoHSand Green Product requirenment,100%EASguaranteed withfull
Datasheet: KND3502A , KND3508A , KND3706A , KND4360A , KND4365A , KND4665B , KND4820B , KND6610A , STP75NF75 , KND8606A , KNE4603A2 , KNE6303A , KNE7306A , KNF3725A , KNF4360A , KNF4365A , KNF4540A .
History: SI5406CDC | SI4862DY | TPC8001 | MSAEX8P50A | NDH832P | JCS12N65ST | IXFB50N80Q2
Keywords - KND8103A MOSFET datasheet
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History: SI5406CDC | SI4862DY | TPC8001 | MSAEX8P50A | NDH832P | JCS12N65ST | IXFB50N80Q2



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