KND8103A Specs and Replacement

Type Designator: KND8103A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO252

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KND8103A datasheet

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KND8103A

30A 30V KNX8103A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA-8103Ais the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.The KIA30N03Bmeet the RoHSand Green Product requirenment,100%EASguaranteed with full ... See More ⇒

Detailed specifications: KND3502A, KND3508A, KND3706A, KND4360A, KND4365A, KND4665B, KND4820B, KND6610A, 7N65, KND8606A, KNE4603A2, KNE6303A, KNE7306A, KNF3725A, KNF4360A, KNF4365A, KNF4540A

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