KND8606A Specs and Replacement

Type Designator: KND8606A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

KND8606A substitution

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KND8606A datasheet

 ..1. Size:208K  kia
 knd8606a knu8606a.pdf pdf_icon

KND8606A

35A 60V N-CHANNELMOSFET KNX8606A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description The KNX8606Ais the high cell density trenched N-ch MOSFETSwith provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The KIA8606 meet the RoHS and green product requirement, 100%EASguaranteed with full functionreliability approved. 2. F... See More ⇒

Detailed specifications: KND3508A, KND3706A, KND4360A, KND4365A, KND4665B, KND4820B, KND6610A, KND8103A, IRFP250N, KNE4603A2, KNE6303A, KNE7306A, KNF3725A, KNF4360A, KNF4365A, KNF4540A, KNF4660A

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