KND8606A Datasheet and Replacement
Type Designator: KND8606A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 19.3 nC
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
KND8606A substitution
KND8606A Datasheet (PDF)
knd8606a knu8606a.pdf

35A 60VN-CHANNELMOSFETKNX8606AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KNX8606Ais the high cell density trenched N-ch MOSFETSwith provide excellent RDSONand gate charge for most of the synchronous buck converter applications. The KIA8606 meet the RoHSand green product requirement, 100%EASguaranteed with full functionreliability approved.2. F
Datasheet: KND3508A , KND3706A , KND4360A , KND4365A , KND4665B , KND4820B , KND6610A , KND8103A , AON7408 , KNE4603A2 , KNE6303A , KNE7306A , KNF3725A , KNF4360A , KNF4365A , KNF4540A , KNF4660A .
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