KND8606A MOSFET. Datasheet pdf. Equivalent
Type Designator: KND8606A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.3 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
KND8606A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KND8606A Datasheet (PDF)
knd8606a knu8606a.pdf
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35A 60VN-CHANNELMOSFETKNX8606AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KNX8606Ais the high cell density trenched N-ch MOSFETSwith provide excellent RDSONand gate charge for most of the synchronous buck converter applications. The KIA8606 meet the RoHSand green product requirement, 100%EASguaranteed with full functionreliability approved.2. F
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