All MOSFET. KNE4603A2 Datasheet

 

KNE4603A2 Datasheet and Replacement


   Type Designator: KNE4603A2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
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KNE4603A2 Datasheet (PDF)

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KNE4603A2

7A30VKNE4603A2Dual N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =14.5m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNE4603A2 is the high cell density trenched Dual N-channel MOSFET, which provideexcellent RDS

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IRF7807APBF | DH150N12B | 12N65KG-TF1-T | 2SK2707 | R5016ANJ | BSB280N15NZ3G | ELM13401CA

Keywords - KNE4603A2 MOSFET datasheet

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