KNE4603A2 Datasheet and Replacement
Type Designator: KNE4603A2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 77 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
KNE4603A2 substitution
KNE4603A2 Datasheet (PDF)
kne4603a2.pdf

7A30VKNE4603A2Dual N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =14.5m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNE4603A2 is the high cell density trenched Dual N-channel MOSFET, which provideexcellent RDS
Datasheet: KND3706A , KND4360A , KND4365A , KND4665B , KND4820B , KND6610A , KND8103A , KND8606A , 7N65 , KNE6303A , KNE7306A , KNF3725A , KNF4360A , KNF4365A , KNF4540A , KNF4660A , KNF4665A .
History: WML10N100C2 | WMO15N65F2 | IRF7530 | MTB030N10RQ8
Keywords - KNE4603A2 MOSFET datasheet
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History: WML10N100C2 | WMO15N65F2 | IRF7530 | MTB030N10RQ8



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