KNE4603A2 MOSFET. Datasheet pdf. Equivalent
Type Designator: KNE4603A2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 77 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
KNE4603A2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNE4603A2 Datasheet (PDF)
..1. Size:198K kia
kne4603a2.pdf
kne4603a2.pdf
7A30VKNE4603A2Dual N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =14.5m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNE4603A2 is the high cell density trenched Dual N-channel MOSFET, which provideexcellent RDS
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
