KNE6303A Datasheet and Replacement
Type Designator: KNE6303A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP-8
KNE6303A substitution
KNE6303A Datasheet (PDF)
kne6303a.pdf
12A, 30VN-CHANNELMOSFETKNX6303AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current2.Applications Vds=30V R =9.0m(typ.),VGS@10V,Ids@12ADS(ON) R =11.5m(typ.),VGS@4.5V,Ids@6ADS(ON)3. PinconfigurationPin Functio
Datasheet: KND4360A , KND4365A , KND4665B , KND4820B , KND6610A , KND8103A , KND8606A , KNE4603A2 , AO3400 , KNE7306A , KNF3725A , KNF4360A , KNF4365A , KNF4540A , KNF4660A , KNF4665A , KNF4665B .
History: DMN601K | APT94N60L2C3G
Keywords - KNE6303A MOSFET datasheet
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History: DMN601K | APT94N60L2C3G
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