KNE7306A Datasheet. Specs and Replacement

Type Designator: KNE7306A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 75 nC

tr ⓘ - Rise Time: 8.8 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: SOP-8

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KNE7306A datasheet

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KNE7306A

22A 60V KNE7306A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R =5.5m (typ)@V =10 V DS(on) GS Super lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology 2.Description The KNE7306Ais the high cell density trenched N-chMOSFETs, which provideexcellent RDSONand gate charge f... See More ⇒

Detailed specifications: KND4365A, KND4665B, KND4820B, KND6610A, KND8103A, KND8606A, KNE4603A2, KNE6303A, AON7408, KNF3725A, KNF4360A, KNF4365A, KNF4540A, KNF4660A, KNF4665A, KNF4665B, KNF6140A

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