KNE7306A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNE7306A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 8.8 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: SOP-8
KNE7306A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNE7306A Datasheet (PDF)
..1. Size:201K kia
kne7306a.pdf
kne7306a.pdf
22A60VKNE7306AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =5.5m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNE7306Ais the high cell density trenched N-chMOSFETs, which provideexcellent RDSONand gatecharge f
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