KNE7306A Datasheet and Replacement
Type Designator: KNE7306A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.8 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: SOP-8
KNE7306A substitution
KNE7306A Datasheet (PDF)
kne7306a.pdf

22A60VKNE7306AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =5.5m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KNE7306Ais the high cell density trenched N-chMOSFETs, which provideexcellent RDSONand gatecharge f
Datasheet: KND4365A , KND4665B , KND4820B , KND6610A , KND8103A , KND8606A , KNE4603A2 , KNE6303A , 2N7000 , KNF3725A , KNF4360A , KNF4365A , KNF4540A , KNF4660A , KNF4665A , KNF4665B , KNF6140A .
History: HY3408AB | OSG07N65FF | SML20L100 | SWP7N65D | SD2932 | HYG055N08NS1C2 | SSU80R850S
Keywords - KNE7306A MOSFET datasheet
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History: HY3408AB | OSG07N65FF | SML20L100 | SWP7N65D | SD2932 | HYG055N08NS1C2 | SSU80R850S



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