STH60N10FI Datasheet. Specs and Replacement

Type Designator: STH60N10FI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 270 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: ISOWATT218

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STH60N10FI substitution

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STH60N10FI datasheet

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STH60N10FI

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH60N10 100 V ... See More ⇒

Detailed specifications: STH4N80FI, STH4N90, STH4N90FI, STH55N10, STH55N10FI, STH5N90, STH5N90FI, STH60N10, IRF530, STH65N05, STH65N05FI, STH65N06, STH65N06FI, STH6N100, STH6N100FI, STH6NA80, STH6NA80FI

Keywords - STH60N10FI MOSFET specs

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