STH60N10FI PDF and Equivalents Search

 

STH60N10FI Specs and Replacement


   Type Designator: STH60N10FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: ISOWATT218
 

 STH60N10FI substitution

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STH60N10FI datasheet

 6.1. Size:381K  st
 sth60n10.pdf pdf_icon

STH60N10FI

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH60N10 100 V ... See More ⇒

Detailed specifications: STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , IRFZ24N , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI .

History: H7N1005LD | RD3P050SN | IRFY120 | TK8P60W5 | FTK50N06F | AO4840 | AGM16N10C

Keywords - STH60N10FI MOSFET specs

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