JCS50N20ABT Datasheet. Specs and Replacement

Type Designator: JCS50N20ABT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 277 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 501 nS

Cossⓘ - Output Capacitance: 672 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-3PB

JCS50N20ABT substitution

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JCS50N20ABT datasheet

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JCS50N20ABT

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JCS50N20ABT

N R N-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge ... See More ⇒

Detailed specifications: JCS4N80V, JCS4N90FH, JCS4N90RH, JCS4N90VH, JCS50N06CH, JCS50N06FH, JCS50N06RH, JCS50N06VH, 13N50, JCS50N20WT, JCS540BT, JCS540CT, JCS540FT, JCS540ST, JCS540WT, JCS5N50CC, JCS5N50FC

Keywords - JCS50N20ABT MOSFET specs

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