STH7NA60 PDF and Equivalents Search

 

STH7NA60 Specs and Replacement

Type Designator: STH7NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 155 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO218

STH7NA60 substitution

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STH7NA60 datasheet

 ..1. Size:346K  1
 sth7na60 sth7na60fi.pdf pdf_icon

STH7NA60

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 sth7na80fi stw7na80.pdf pdf_icon

STH7NA60

STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V ... See More ⇒

 8.2. Size:340K  1
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STH7NA60

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 8.3. Size:106K  st
 sth7na90fi stw7na90.pdf pdf_icon

STH7NA60

STW7NA90 STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE VDSS RDS(on) ID STW7NA90 900 V ... See More ⇒

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Detailed specifications: STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , IRLB3034 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 .

Keywords - STH7NA60 MOSFET specs

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