STH7NA60 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH7NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO218
STH7NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH7NA60 Datasheet (PDF)
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STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V
sth7na90fi stw7na90.pdf
STW7NA90STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218FAST POWER MOSFETTYPE VDSS RDS(on) IDSTW7NA90 900 V
Datasheet: STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , 2N7000 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 .
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