All MOSFET. JCS730V Datasheet

 

JCS730V Datasheet and Replacement


   Type Designator: JCS730V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO251
 

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JCS730V Datasheet (PDF)

 ..1. Size:811K  jilin sino
 jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf pdf_icon

JCS730V

N RN-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 RdsonVgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

 0.1. Size:1785K  jilin sino
 jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf pdf_icon

JCS730V

N RN-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply

Datasheet: JCS730C , JCS730CC , JCS730F , JCS730FC , JCS730R , JCS730RC , JCS730S , JCS730SC , AO4468 , JCS730VC , JCS7HN60B , JCS7HN60C , JCS7HN60F , JCS7HN60R , JCS7HN60S , JCS7HN60V , JCS7HN65B .

History: CP666 | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K

Keywords - JCS730V MOSFET datasheet

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