JCS730V MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS730V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO251
JCS730V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS730V Datasheet (PDF)
jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf
N RN-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 RdsonVgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES
jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf
N RN-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply
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