STH8N80FI Datasheet. Specs and Replacement

Type Designator: STH8N80FI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: ISOWATT218

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STH8N80FI datasheet

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Detailed specifications: STH7N90FI, STH7NA60, STH7NA60FI, STH7NA80, STH7NA80FI, STH80N05, STH80N05FI, STH8N80, IRFB3206, STH8NA60, STH8NA60FI, STH9N80, STH9N80FI, STH9NA60, STHV102, STHV102FI, STHV82

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