STH8N80FI Specs and Replacement
Type Designator: STH8N80FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: ISOWATT218
STH8N80FI substitution
STH8N80FI datasheet
stw8nb90 sth8nb90fi.pdf
STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V ... See More ⇒
Detailed specifications: STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , MMIS60R580P , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 .
History: IPW90R120C3
Keywords - STH8N80FI MOSFET specs
STH8N80FI cross reference
STH8N80FI equivalent finder
STH8N80FI pdf lookup
STH8N80FI substitution
STH8N80FI replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPW90R120C3
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