KNH2910A Datasheet and Replacement
Type Designator: KNH2910A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO3P
KNH2910A substitution
KNH2910A Datasheet (PDF)
knb2910a knp2910a knh2910a.pdf

130A100VKNX2910AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications High efficiency synchronous rectification in SMPS High speed power switching2. Features R =5.0m @V =10 VDS(on) GSSuper high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant)3. Pinconfiguratio
Datasheet: JCS9N90FT , JCS9N90WT , JS65R170ABM , JS65R170BM , JS65R170CM , JS65R170FM , JS65R170SM , JS65R170WM , 2N7002 , KNH3206A , KNH3208A , KNH3306A , KNH3725A , KNH7150A , KNH7650A , KNH9120A , KNH9130A .
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