KNH2910A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNH2910A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 630 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO3P
KNH2910A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNH2910A Datasheet (PDF)
..1. Size:341K kia
knb2910a knp2910a knh2910a.pdf
knb2910a knp2910a knh2910a.pdf
130A100VKNX2910AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications High efficiency synchronous rectification in SMPS High speed power switching2. Features R =5.0m @V =10 VDS(on) GSSuper high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant)3. Pinconfiguratio
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