All MOSFET. STH9N80 Datasheet

 

STH9N80 Datasheet and Replacement


   Type Designator: STH9N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO218
 

 STH9N80 substitution

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STH9N80 Datasheet (PDF)

 ..1. Size:338K  1
 sth9n80 sth9n80fi.pdf pdf_icon

STH9N80

 9.1. Size:133K  st
 sth9na80fi.pdf pdf_icon

STH9N80

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 9.2. Size:130K  st
 sth9na60fi.pdf pdf_icon

STH9N80

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 9.3. Size:147K  njs
 sth9na80fi stw9na80.pdf pdf_icon

STH9N80

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Datasheet: STH7NA80 , STH7NA80FI , STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , IRFB7545 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L .

Keywords - STH9N80 MOSFET datasheet

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