All MOSFET. STH9N80 Datasheet

 

STH9N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH9N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO218

 STH9N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH9N80 Datasheet (PDF)

 ..1. Size:338K  1
 sth9n80 sth9n80fi.pdf

STH9N80 STH9N80

 9.1. Size:133K  st
 sth9na80fi.pdf

STH9N80 STH9N80

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 9.2. Size:130K  st
 sth9na60fi.pdf

STH9N80 STH9N80

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 9.3. Size:147K  njs
 sth9na80fi stw9na80.pdf

STH9N80 STH9N80

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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