All MOSFET. KNU6610A Datasheet

 

KNU6610A Datasheet and Replacement


   Type Designator: KNU6610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO251
 
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KNU6610A Datasheet (PDF)

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KNU6610A

15A100VN-CHANNELMOSFET KNX6610AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesThe KNX6610Ais the highest performance trench N-ch MOSFETSwith extreme high cell density,which provide excellent RDSONand gate charge for most of the synchronous buck converter applications.The KNX6610A meet the RoHSand green product requirement, 100%EASguaranteed with full func

Datasheet: KNP6180A , KNP6450A , KNP6650A , KNP7150A , KNP9120A , KNP9130A , KNU4360A , KNU4820B , 2SK3918 , KNU8103A , KNU8606A , KNY2803A , KNY3204A , KNY3303A , KNY3403A , KNY3404C , KNY3406C .

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