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KNU6610A Specs and Replacement

Type Designator: KNU6610A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO251

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KNU6610A datasheet

 ..1. Size:261K  kia
 knd6610a knu6610a.pdf pdf_icon

KNU6610A

15A 100V N-CHANNELMOSFET KNX6610A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features The KNX6610Ais the highest performance trench N-ch MOSFETSwith extreme high cell density, which provide excellent RDSONand gate charge for most of the synchronous buck converter applications. The KNX6610A meet the RoHSand green product requirement, 100%EASguaranteed with full func... See More ⇒

Detailed specifications: KNP6180A, KNP6450A, KNP6650A, KNP7150A, KNP9120A, KNP9130A, KNU4360A, KNU4820B, EMB04N03H, KNU8103A, KNU8606A, KNY2803A, KNY3204A, KNY3303A, KNY3403A, KNY3404C, KNY3406C

Keywords - KNU6610A MOSFET specs

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