All MOSFET. 2N6760JTXV Datasheet

 

2N6760JTXV MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N6760JTXV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO204

 2N6760JTXV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6760JTXV Datasheet (PDF)

 8.1. Size:146K  international rectifier
2n6760 irf330.pdf

2N6760JTXV
2N6760JTXV

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 8.2. Size:138K  fairchild semi
2n6759 2n6760.pdf

2N6760JTXV
2N6760JTXV

 9.1. Size:142K  1
2n6766.pdf

2N6760JTXV
2N6760JTXV

 9.2. Size:140K  1
2n6768.pdf

2N6760JTXV
2N6760JTXV

 9.3. Size:140K  1
2n6764.pdf

2N6760JTXV
2N6760JTXV

 9.4. Size:146K  international rectifier
2n6762 irf430.pdf

2N6760JTXV
2N6760JTXV

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 9.5. Size:144K  international rectifier
2n6768 irf350.pdf

2N6760JTXV
2N6760JTXV

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 9.6. Size:145K  international rectifier
2n6766 irf250.pdf

2N6760JTXV
2N6760JTXV

PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique

 9.7. Size:140K  fairchild semi
2n6763.pdf

2N6760JTXV
2N6760JTXV

 9.8. Size:140K  fairchild semi
2n6767.pdf

2N6760JTXV
2N6760JTXV

 9.9. Size:142K  fairchild semi
2n6765.pdf

2N6760JTXV
2N6760JTXV

 9.10. Size:137K  fairchild semi
2n6761 2n6762.pdf

2N6760JTXV
2N6760JTXV

 9.11. Size:137K  fairchild semi
2n6769.pdf

2N6760JTXV
2N6760JTXV

 9.12. Size:64K  omnirel
2n6764 2n6766 2n6768 2n6770.pdf

2N6760JTXV
2N6760JTXV

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION

Datasheet: 2N6758JTX , 2N6758JTXV , 2N6759 , 2N6760 , 2N6760JAN , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , IRFZ24N , 2N6761 , 2N6762 , 2N6762JAN , 2N6762JANTX , 2N6762JANTXV , 2N6762JTX , 2N6762JTXV , 2N6763 .

 

 
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