2N6760JTXV Specs and Replacement
Type Designator: 2N6760JTXV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO204
2N6760JTXV substitution
- MOSFET ⓘ Cross-Reference Search
2N6760JTXV datasheet
2n6760 irf330.pdf
PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
Detailed specifications: 2N6758JTX , 2N6758JTXV , 2N6759 , 2N6760 , 2N6760JAN , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , AON7506 , 2N6761 , 2N6762 , 2N6762JAN , 2N6762JANTX , 2N6762JANTXV , 2N6762JTX , 2N6762JTXV , 2N6763 .
Keywords - 2N6760JTXV MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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