All MOSFET. KPE4403A2 Datasheet

 

KPE4403A2 Datasheet and Replacement


   Type Designator: KPE4403A2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP8
 

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KPE4403A2 Datasheet (PDF)

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KPE4403A2

-5.0A-30VKPE4403A2Dual P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =42m(typ)@V =10 VDS(on) GSGreen device available Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KPE4403A2 is the high cell density trenched Dual P-channel MOSFET, whichprovide excellentRD

Datasheet: KNU8606A , KNY2803A , KNY3204A , KNY3303A , KNY3403A , KNY3404C , KNY3406C , KNY3703A , IRF3205 , KPE4703A , S-L2N7002DW1T1G , L2N7002FLT1G , L2N7002KDW1T1G , L2N7002KDW1T3G , L2N7002KLT1G , L2N7002KN3T5G , S-L2N7002LT1G .

History: WMQ25P03T1 | WSD2018BDN22 | ME9435-G

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