KPE4403A2 Specs and Replacement
Type Designator: KPE4403A2
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP8
KPE4403A2 substitution
- MOSFET ⓘ Cross-Reference Search
KPE4403A2 datasheet
kpe4403a2.pdf
-5.0A -30V KPE4403A2 Dual P-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R =42m (typ)@V =10 V DS(on) GS Green device available Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology 2.Description The KPE4403A2 is the high cell density trenched Dual P-channel MOSFET, whichprovide excellent RD... See More ⇒
Detailed specifications: KNU8606A, KNY2803A, KNY3204A, KNY3303A, KNY3403A, KNY3404C, KNY3406C, KNY3703A, IRF3205, KPE4703A, S-L2N7002DW1T1G, L2N7002FLT1G, L2N7002KDW1T1G, L2N7002KDW1T3G, L2N7002KLT1G, L2N7002KN3T5G, S-L2N7002LT1G
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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