All MOSFET. KPE4403A2 Datasheet

 

KPE4403A2 Datasheet and Replacement


   Type Designator: KPE4403A2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP8
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KPE4403A2 Datasheet (PDF)

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KPE4403A2

-5.0A-30VKPE4403A2Dual P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =42m(typ)@V =10 VDS(on) GSGreen device available Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KPE4403A2 is the high cell density trenched Dual P-channel MOSFET, whichprovide excellentRD

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMK25N80M3 | MTC2804Q8

Keywords - KPE4403A2 MOSFET datasheet

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